2ED21834S06J
Features
- Unique Infineon Thin-Film-Silicon on Insulator (SOI)-Technology
- Negative VS transient immunity of 100 V
- Floating channel designed for bootstrap operation
- Operating voltages (VS node) upto + 650 V
- Maximum bootstrap voltage (VB node) of + 675 V
- Integrated ultra-fast, low resistance bootstrap diode
- Logic Operational up to
- 11 V on VS Pin
- Negative Voltage Tolerance on Inputs of
- 5 V
- Independent under voltage lockout for both channels
- Schmitt trigger inputs with hysteresis
- 3.3 V, 5 V and 15 V input logic patible
- Maximum supply voltage of 25 V
- Dual package options of DSO-8 and DSO-14
- High and Low Voltage Pins Separated for Maximum Creepage and
Clearance (2ED21824S06J version)
- Separate logic and power ground with the 2ED21824S06J version
- Interlocking function with internal 400 ns dead time and programmable up to 5 us with external resistor (2ED21824S06J only)
- Ro HS pliant
Product summary
VS_OFFSET = 650 V max Io+pk / Io- pk(typ.) =+ 2.5 A/
- 2.5 A...
