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2ED2184S06F Datasheet 650V half-bridge gate driver

Manufacturer: Infineon

Download the 2ED2184S06F datasheet PDF. This datasheet also includes the 2ED2182S06F variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (2ED2182S06F-Infineon.pdf) that lists specifications for multiple related part numbers.

Overview

2ED2182 (4) S06F (J) 2ED2182 (4) S06F (J) 650 V half-bridge gate driver with integrated bootstrap.

Key Features

  • Unique Infineon Thin-Film-Silicon on Insulator (SOI)-Technology.
  • Negative VS transient immunity of 100 V.
  • Floating channel designed for bootstrap operation.
  • Operating voltages (VS node) upto + 650 V.
  • Maximum bootstrap voltage (VB node) of + 675 V.
  • Integrated ultra-fast, low resistance bootstrap diode.
  • Logic Operational up to.
  • 11 V on VS Pin.
  • Negative Voltage Tolerance on Inputs of.
  • 5 V.
  • Independent under voltage lockout for both chann.

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