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2EDB8259Y - Dual-channel isolated gate-driver

This page provides the datasheet information for the 2EDB8259Y, a member of the 2EDB8259F Dual-channel isolated gate-driver family.

Datasheet Summary

Description

3 Functional description 5 Block diagram

Features

  • 2-channel isolated gate driver for Si and SiC MOSFETs and GaN HEMTs power switches.
  • Fast input-to-output propagation (38 ns) with excellent stability (+9/-5 ns).
  • Strong output stage: 5 A/9 A source/sink.
  • Fast output clamping for VDDA/B < UVLO.
  • Fast UVLO recovery time (< 2 μs).
  • Three VDDA/B UVLO options: 4 V, 8 V, 15 V.
  • CMTI > 150 V/ns.
  • Available in 16/14-pin 150 mil DSO package Isolation and safety certificates.
  • UL.

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Datasheet preview – 2EDB8259Y

Datasheet Details

Part number 2EDB8259Y
Manufacturer Infineon
File Size 4.17 MB
Description Dual-channel isolated gate-driver
Datasheet download datasheet 2EDB8259Y Datasheet
Additional preview pages of the 2EDB8259Y datasheet.

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Full PDF Text Transcription

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EiceDRIVER™ 2EDB8259F, 2EDBx259Y Dual-channel isolated gate-driver ICs in 150 mil DSO package EiceDRIVER™ 2EDB8259F, 2EDBx259Y is a family of dual-channel isolated gate-driver ICs, designed to drive Si and SiC MOSFETs and GaN HEMTs power switches. All products are available in a DSO package with 4 mm input-to-output creepage and provide basic isolation by means of on-chip coreless transformer (CT) technology. 2EDBx279Y variants in a 14-pin DSO package offer increased channel-to-channel creepage. They are suited for use in applications with higher bus voltage or higher pollution degree and, in general, can ease PCB routing. All versions offer optional shoot-through protection (STP) and dead-time control (DTC) functionality.
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