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2EDR8259H - Dual-channel isolated gate driver

Datasheet Summary

Description

3 Functional description 5 Block diagram

Features

  • 2-channel isolated gate driver for Si and SiC MOSFETs and GaN HEMTs power switches Table 1 Portfolio Part number UVLO EN/DIS Package.
  • Fast input-to-output propagation (38 ns) with excellent stability (+9/-5 ns).
  • Strong output stage: 5 A/9 A source/ sink.
  • Fast output clamping for VDDA/B < UVLO.
  • Fast UVLO recovery time (< 2 μs) 2EDR8259H 2EDR7259X 2EDR8259X 2EDR9259X 8 V DIS 4 V DIS 8 V DIS 15 V DIS DSO16-300mil DSO14-300mil DSO14-300mil DSO14-3.

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Datasheet Details

Part number 2EDR8259H
Manufacturer Infineon
File Size 4.52 MB
Description Dual-channel isolated gate driver
Datasheet download datasheet 2EDR8259H Datasheet
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Full PDF Text Transcription

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EiceDRIVER™ 2EDR8259H, 2EDRx259X, 2EDRx258X Dual-channel isolated gate driver ICs in 300 mil DSO package EiceDRIVER™ 2EDR8259H, 2EDRx259X, 2EDRx258X is a family of dual-channel isolated gate driver ICs, designed to drive Si and SiC MOSFETs and GaN HEMTs power switches. All products are available in a DSO package with 8 mm input-to-output creepage and provide reinforced isolation by means of on-chip coreless transformer (CT) technology. 2EDRx259X and 2EDRx258X variants in a 14-pin DSO package offer increased channel-to-channel creepage. They are suited for use in applications with higher bus voltage or higher pollution degree and, in general, can ease PCB routing. All versions offer optional shoot-through protection (STP) and dead-time control (DTC) functionality.
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