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2EDS8165H - MOSFET gate-driver

This page provides the datasheet information for the 2EDS8165H, a member of the 2EDF7275F MOSFET gate-driver family.

Datasheet Summary

Description

The EiceDRIVER™ 2EDi is a family of fast dual-channel isolated MOSFET gate-driver ICs providing functional (2EDFx) or reinforced (2EDSx) input-to-output isolation by means of coreless transformer (CT) technology.

Features

  • 4 A/8 A or 1 A/2 A source/sink output current.
  • Up to 10 MHz PWM switching frequency.
  • PWM signal propagation delay typ. 37 ns with.
  • 3 ns channel-to-channel mismatch.
  • +7/-6 ns propagation delay variance.
  • Common Mode Transient Immunity CMTI >150 V/ns.
  • Fast safety turn-off in case of input side Undervoltage Lockout (UVLO).
  • Output supply voltage from 4.5 V to 20 V with 4 V or 8 V UVLO threshold.
  • Wide temperature operati.

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Datasheet preview – 2EDS8165H

Datasheet Details

Part number 2EDS8165H
Manufacturer Infineon
File Size 726.18 KB
Description MOSFET gate-driver
Datasheet download datasheet 2EDS8165H Datasheet
Additional preview pages of the 2EDS8165H datasheet.

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Full PDF Text Transcription

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EiceDRIVER™ 2EDi product family Fast, robust, dual-channel, functional and reinforced isolated MOSFET gate-driver with accurate and stable timing Description The EiceDRIVER™ 2EDi is a family of fast dual-channel isolated MOSFET gate-driver ICs providing functional (2EDFx) or reinforced (2EDSx) input-to-output isolation by means of coreless transformer (CT) technology. Due to high driving current, excellent common-mode rejection and fast signal propagation, 2EDi is particularly well suited for driving medium- to high-voltage MOSFETs (CoolMOS™, OptiMOS™, CoolSIC™, CoolGaN™) in fastswitching power systems. Features • 4 A/8 A or 1 A/2 A source/sink output current • Up to 10 MHz PWM switching frequency • PWM signal propagation delay typ.
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