• Part: 2N08L07
  • Description: Power-Transistor
  • Manufacturer: Infineon
  • Size: 310.05 KB
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Datasheet Summary

OptiMOS® Power-Transistor Feature - N-Channel - Enhancement mode - Logic Level - 175°C operating temperature - Avalanche rated - dv/dt rated SPP80N08S2L-07 SPB80N08S2L-07 Product Summary 75 V RDS(on) max. SMD version 6.8 mΩ 80 A P- TO263 -3-2 P- TO220 -3-1 Type SPP80N08S2L-07 SPB80N08S2L-07 Package P- TO220 -3-1 P- TO263 -3-2 Ordering Code Q67060-S6015 Q67060-S6016 Marking 2N08L07 2N08L07 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current 1) TC=25°C Pulsed drain current TC=25°C Avalanche energy, single pulse ID=80 A , VDD=25V, RGS=25Ω Repetitive avalanche energy, limited by Tjmax2) Reverse diode dv/dt IS=80A,...