35CN10N
35CN10N is Power-Transistor manufactured by Infineon.
Features
- N-channel, normal level
- Excellent gate charge x R DS(on) product (FOM)
- Very low on-resistance R DS(on)
Product Summary VDS RDS(on),max (TO252) ID
100 V 33 m W 27 A
- 175 °C operating temperature
- Pb-free lead plating; Ro HS pliant
- Qualified according to JEDEC1) for target application
- Ideal for high-frequency switching and synchronous rectification
- Halogen-free according to IEC61249-2-21
Type
IPB34CN10N G
IPD33CN10N G
IPI35CN10N G
IPP35CN10N G
Package Marking
PG-TO263-3 34CN10N
PG-TO252-3 33CN10N
PG-TO262-3 35CN10N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
PG-TO220-3 35CN10N
Value
Unit
Continuous drain current
I D T C=25 °C
T C=100 °C
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse
E AS I D=27 A, R GS=25 W
Gate source voltage3)
V GS
Power dissipation
P tot T...
