35N60C3
Features
- New revolutionary high voltage technology
- Ultra low gate charge
- Periodic avalanche rated
- Extreme dv /dt rated
- Ultra low effective capacitances
- Improved transconductance
Product Summary V DS @ T j,max R DS(on),max ID
SPW35N60C3
650 V 0.1 Ω 34.6 A
PG-TO247
Type SPW35N60C3
Package PG-TO247
Ordering Code Q67040-S4673
Marking 35N60C3
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter Continuous drain current
Pulsed drain current1)
Avalanche energy, single pulse
Avalanche energy, repetitive t
1),2) AR
Avalanche current, repetitive t
1) AR
Symbol Conditions I D T C=25 °C
T C=100 °C I D,pulse T C=25 °C E AS I D=17.3 A, V DD=50 V E AR I D=34.6 A, V DD=50 V I AR
Drain source voltage slope dv /dt
I D=34.6 A, V DS=480 V, T j=125 °C
Value 34.6 21.9 103.8 1500 1.5 34.6
Unit A m J A V/ns
Gate source voltage
Power dissipation Operating and storage temperature Reverse diode dv/dt 6)
V GS static V GS AC (f >1 Hz) P tot T C=25 °C T j,...
