3N1012 - Power-Transistor

Infineon

Key Features

N-channel - Enhancement mode.
Automotive AEC Q101 qualified.
MSL1 up to 260°C peak reflow.
175°C operating temperature.
Green product (RoHS compliant).
100% Avalanche tested IPB70N10S3-12 IPI70N10S3-12, IPP70N10S3-12 Product Summary V DS R DS(on),max (SMD version) ID 100 V 11.3 mΩ 70 A PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Type IPB70N10S3-12 IPI70N10S3-12 IPP70N10S3-12 Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Marking 3N1012 3N1.

3N1012 power-transistor by Infineon - Datasheet Preview

Datasheet Details

Part number	3N1012
Manufacturer	Infineon
File Size	186.78 KB
Description	Power-Transistor
Datasheet	3N1012 Datasheet

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Full PDF Text Transcription (Reference)

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OptiMOS®-T Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • 100% Avalanche tested IPB70N10S3-12 IPI70N10S3-12, IPP70N10S3-12 Product Summary V DS R DS(on),max (SMD version) ID 100 V 11.