• Part: 3N1012
  • Description: Power-Transistor
  • Category: Transistor
  • Manufacturer: Infineon
  • Size: 186.78 KB
Download 3N1012 Datasheet PDF
Infineon
3N1012
Features - N-channel - Enhancement mode - Automotive AEC Q101 qualified - MSL1 up to 260°C peak reflow - 175°C operating temperature - Green product (Ro HS pliant) - 100% Avalanche tested IPB70N10S3-12 IPI70N10S3-12, IPP70N10S3-12 Product Summary V DS R DS(on),max (SMD version) ID 100 V 11.3 mΩ 70 A PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Type IPB70N10S3-12 IPI70N10S3-12 IPP70N10S3-12 Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Marking 3N1012 3N1012 3N1012 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V2) Pulsed drain current1) I D,pulse T C=25 °C Avalanche energy, single pulse1) E AS I D=35A Avalanche current, single pulse I AS Gate source voltage V GS Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg IEC climatic category; DIN IEC 68-1 Value 70 280 410 70 ±20 125 -55 ... +175 55/175/56 Unit A m J A V W °C Rev. 1.0...