• Part: 3N10L26
  • Description: Power-Transistor
  • Category: Transistor
  • Manufacturer: Infineon
  • Size: 173.92 KB
Download 3N10L26 Datasheet PDF
Infineon
3N10L26
Features - N-channel - Enhancement mode - Automotive AEC Q101 qualified - MSL1 up to 260°C peak reflow - 175°C operating temperature - Green product (Ro HS pliant) - 100% Avalanche tested IPD35N10S3L-26 Product Summary V DS R DS(on),max ID 100 V 26 m W 35 A PG-TO252-3-11 Type IPD35N10S3L-26 Package Marking PG-TO252-3-11 3N10L26 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=25°C, V GS=10V T C=100°C, V GS=10V1) Pulsed drain current1) I D,pulse T C=25°C Avalanche energy, single pulse1) E AS I D=17A Avalanche current, single pulse I AS Gate source voltage2) V GS Power dissipation P tot T C=25°C Operating and storage temperature T j, T stg IEC climatic category; DIN IEC 68-1 Value 35 140 175 35 ±20 71 -55 ... +175 55/175/56 Unit A m J A V W °C Rev. 1.1 page...