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OptiMOS®-T Power-Transistor
Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • 100% Avalanche tested
IPD35N10S3L-26
Product Summary V DS R DS(on),max ID
100 V 26 mW 35 A
PG-TO252-3-11
Type IPD35N10S3L-26
Package
Marking
PG-TO252-3-11 3N10L26
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
I D T C=25°C, V GS=10V
T C=100°C, V GS=10V1)
Pulsed drain current1)
I D,pulse T C=25°C
Avalanche energy, single pulse1) E AS I D=17A
Avalanche current, single pulse
I AS
Gate source voltage2)
V GS
Power dissipation
P tot T C=25°C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IE
3N10L26 Datasheet
