42DN25N
42DN25N is Power Transistor manufactured by Infineon.
Features
- Optimized for dc-dc conversion
- N-channel, normal level
- Excellent gate charge x R DS(on) product (FOM)
- Low on-resistance R DS(on)
- 150 °C operating temperature
- Pb-free lead plating; Ro HS pliant
- Qualified according to JEDEC1) for target application
- Halogen-free according to IEC61249-2-21
BSZ42DN25NS3 G
Product Summary VDS RDS(on),max ID
250 V 425 m W
5A
PG-TSDSON-8
Type BSZ42DN25NS3 G
Package
Marking
PG-TSDSON-8 42DN25N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current2) Avalanche energy, single pulse Reverse diode dv /dt
I D,pulse E AS dv /dt
T C=25 °C T C=100 °C T C=25 °C I D=2.5 A, R GS=25 W
Gate source voltage
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
1)J-STD20 and JESD22 2) see figure 3
Value
5 3.5 20 40 10 ±20 33.8 -55 ... 150 55/150/56
Unit A m J k V/µs V W °C
Rev. 2.4 page 1
2015-05-13
Parameter
Symbol...
