5N10029
Description
1.1 2021-11-12 OptiMOS™ 5 Automotive Power MOSFET, 100 V IAUA180N10S5N029 at Tj=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current Pulsed drain current2) Avalanche energy, single pulse2) Avalanche current, single pulse Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 ID V GS=10 V, Chip limitation1) V GS=10V, DC current2) I D,pulse E AS I AS V GS P tot T j, T stg - T a=85 °C, V GS=10 V, R thJA on 2s2p2,3) T C=25 °C, t p= 100 µs I D=90 A T C=25 °C - Value Unit 180 A 180 24 561 220 mJ 150 A ±20 V 221 W -55.
Key Features
- OptiMOS™ power MOSFET for automotive applications
- N-channel – Enhancement mode – Normal Level
- Extended qualification beyond AEC-Q101
- Enhanced electrical testing
- Robust design
- MSL3 up to 260°C peak reflow
- 175°C operating temperature
- Green product (RoHS pliant)
- 100% Avalanche tested
