5R380CE
Description
inal Data Sheet 2 Rev.2.2,2016-06-13 500VCoolMOSªCEPowerTransistor IPP50R380CE 1Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current1) Pulsed drain current2) Avalanche energy, single pulse Avalanche energy, repetitive Avalanche current, repetitive MOSFET dv/dt ruggedness ID ID,pulse EAS EAR IAR dv/dt Gate source voltage VGS Power dissipation (non FullPAK) TO-220 Ptot Operating and storage temperature Tj,Tstg Mounting torque (non FullPAK) TO-220 - Continuous diode forward current IS Diode pulse current2) IS,pulse Reverse diode dv/dt3) dv/dt Maximum diode mutation speed3) dif/dt Min.
Key Features
- ExtremelylowlossesduetoverylowFOMRdson
- Veryhighmutationruggedness
- Easytouse/drive
- Pb-freeplating,Halogenfreemoldpound
- QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20 andJESD22)
