Datasheet Summary
IGLD60R190D1
IGLD60R190D1
600V CoolGaN™ enhancement-mode Power Transistor
Features
- Enhancement mode transistor
- Normally OFF switch
- Ultra fast switching
- No reverse-recovery charge
- Capable of reverse conduction
- Low gate charge, low output charge
- Superior mutation ruggedness
- Qualified for industrial applications according to JEDEC
Standards (JESD47 and JESD22)
Benefits
- Improves system efficiency
- Improves power density
- Enables higher operating frequency
- System cost reduction savings
- Reduces EMI
G SK S S
S S SK G
Gate Drain Kelvin Source Source
8 1,2,3,4
7 5,6
Applications
SMPS and high density chargers based on the half-bridge topology...