Datasheet Summary
IGT60R190D1S
IGT60R190D1S
600V CoolGaN™ enhancement-mode Power Transistor
Features
- Enhancement mode transistor
- Normally OFF switch
- Ultra fast switching
- No reverse-recovery charge
- Capable of reverse conduction
- Low gate charge, low output charge
- Superior mutation ruggedness
- Qualified for standard grade applications according to JEDEC standards
Benefits
- Improves system efficiency
- Improves power density
- Enables higher operating frequency
- System cost reduction savings
- Reduces EMI
1 1
SK SK
1 1
Gate Drain Kelvin Source Source
8 drain contact
7 1,2,3,4,5,6
Applications
Consumer SMPS and high density chargers based on the half-bridge topology...