78CN10N
78CN10N is Power Transistor manufactured by Infineon.
IPB79CN10N G IPD78CN10N G IPI80CN10N G IPP80CN10N G
OptiMOS™2 Power-Transistor
Features
- N-channel, normal level
- Excellent gate charge x R DS(on) product (FOM)
- Very low on-resistance R DS(on)
Product Summary VDS RDS(on),max (TO252) ID
100 V 78 mW 13 A
- 175 °C operating temperature
- Pb-free lead plating; RoHS pliant
- Qualified according to JEDEC1) for target application
- Ideal for high-frequency switching and synchronous rectification
- Halogen-free according to IEC61249-2-21
Type
IPB79CN10N G
IPD78CN10N G
IPI80CN10N G
IPP80CN10N G
Package Marking
PG-TO263-3 79CN10N
PG-TO252-3 78CN10N
PG-TO262-3 80CN10N
Maximum ratings, at T j=25 °C, unless otherwise...
