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79CN10N - Power Transistor

Datasheet Summary

Features

  • N-channel, normal level.
  • Excellent gate charge x R DS(on) product (FOM).
  • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO252) ID 100 V 78 mW 13 A.
  • 175 °C operating temperature.
  • Pb-free lead plating; RoHS compliant.
  • Qualified according to JEDEC1) for target.

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Datasheet Details

Part number 79CN10N
Manufacturer Infineon
File Size 1.00 MB
Description Power Transistor
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    Full PDF Text Transcription

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    IPB79CN10N G IPD78CN10N G IPI80CN10N G IPP80CN10N G OptiMOS™2 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO252) ID 100 V 78 mW 13 A • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchronous rectification • Halogen-free according to IEC61249-2-21 Type IPB79CN10N G IPD78CN10N G IPI80CN10N G IPP80CN10N G Package Marking PG-TO263-3 79CN10N PG-TO252-3 78CN10N PG-TO262-3 80CN10N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions PG-TO220-3 80CN10N Value Unit Continuous drain current ID T C=25 °C
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