80R1K4P7
Description
Sheet 2 Rev.2.1,2018-02-07 800VCoolMOSªP7PowerTransistor IPA80R1K4P7 1Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current1) ID Pulsed drain current2) Avalanche energy, single pulse Avalanche energy, repetitive Avalanche current, repetitive MOSFET dv/dt ruggedness ID,pulse EAS EAR IAR dv/dt Gate source voltage VGS Power dissipation Operating an.
Key Features
- Best-in-classFOMRDS(on)*Eoss;reducedQg,Ciss,andCoss
- Best-in-classDPAKRDS(on)
- Best-in-classV(GS)thof3VandsmallestV(GS)thvariationof±0.5V
- IntegratedZenerDiodeESDprotection
- Fullyqualifiedacc.JEDECforIndustrialApplications
- Fullyoptimizedportfolio Benefits
- Best-in-classperformance
- Enablinghigherpowerdensitydesigns,BOMsavingsandlower assemblycosts
- Easytodriveandtoparallel
- BetterproductionyieldbyreducingESDrelatedfailures
