8R1K4CE
Description
2 Final Data Sheet 3 Rev.2.1,2015-06-23 800VCoolMOS™CEPowerTransistor IPA80R1K4CE 2Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current1) Pulsed drain current2) Avalanche energy, single pulse Avalanche energy, repetitive Avalanche current, repetitive MOSFET dv/dt ruggedness Gate source voltage (static) Gate source voltage (dynamic) Power dissipation Storage temperature Operating junction temperature Mounting torque Continuous diode forward current Diode pulse current2) Reverse diode dv/dt3) ID ID,pulse EAS EAR IAR dv/dt VGS VGS Ptot Tstg Tj IS IS,pulse dv/dt Maximum diode mutation speed Insulation withstand voltage for TO-220FP dif/dt VISO Min.
Key Features
- Highvoltagetechnology
- Extremedv/dtrated
- Highpeakcurrentcapability
- Lowgatecharge
- Loweffectivecapacitances
- Pb-freeplating,RoHSpliant,Halogenfreemoldpound
- Qualifiedforconsumergradeapplications
