900N20N
900N20N is Power Transistor manufactured by Infineon.
Type
Opti MOSTM3 Power-Transistor
Features
- Optimized for dc-dc conversion
- N-channel, normal level
- Excellent gate charge x R DS(on) product (FOM)
- Low on-resistance R DS(on)
- 150 °C operating temperature
- Pb-free lead plating; Ro HS pliant
- Qualified according to JEDEC1) for target application
- Halogen-free according to IEC61249-2-21
BSZ900N20NS3 G
Product Summary VDS RDS(on),max ID
200 V 90 m W 15.2 A
PG-TSDSON-8
Type BSZ900N20NS3 G
Package
Marking
PG-TSDSON-8 900N20N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current2) Avalanche energy, single pulse Reverse diode dv /dt
I D,pulse E AS dv /dt
T C=25 °C T C=100 °C T C=25 °C I D=7.6 A, R GS=25 W
Gate source voltage
V GS
Power dissipation
P tot T C=25...
