Infineon Technologies AIDK12S65C5
The 5th Generation CoolSiC™ Automotive Schottky Diode represents Infineon leading edge technology for Silicon Carbide Schottky Barrier diodes. This product family has been designed to complement Infineon’s IGBT and CoolMOS™ portfolio.FEATURES
● Revolutionary semiconductor material - Silicon Carbide● Benchmark switching behavior
● No reverse recovery/ No forward recovery
● Temperature independent switching behavior
● High surge current capability
● Pb-free lead plating; RoHS compliant
● Junction Temperature range from -40°C to 175°C
● System efficiency improvement over Si diodes
● System cost / size savings due to reduced cooling requirements
● Enabling higher frequency / increased power density solutions
● Higher system reliability due to lower operating temperatures
● Reduced EMI Potential
APPLICATIONS
● Traction inverter● Booster / DCDC Converter
● On board Charger / PFC Product Validation “Qualified for Automotive
APPLICATIONS
. Product Validation according to AEC-Q100/101”DESCRIPTION
Thanks to a compact design and a technology based on thin wafers, this family of products shows improved efficiency over all load conditions resulting from both its thermal characteristics and low figure of merit (Qc x Vf). This ensures meeting the most stringent application requirements in the 650V voltage class.