Infineon Technologies AIGB30N65H5
IGBT
| Part No. | AIGB30N65H5 |
|---|---|
| Datasheet | AIGB30N65H5 Download |
| Manufacturer |  Infineon Technologies |
| Description | IGBT |
| Buy | Stock & Price |
FEATURES AND BENEFITS
: High speed H5 technology offering:● Best-in-Class efficiency in hard switching and resonant topologies
● Plug and play replacement of previous generation IGBTs
● 650V breakdown voltage
● Low gate charge QG
● Maximum junction temperature 175°C
● Dynamically stress tested
● Qualified according to AEC-Q101
● Green package (RoHS compliant)
● Complete product spectrum and PSpice Models: C G E C
APPLICATIONS
:● Off-board charger
● On-board charger
● DC/DC converter
● Power-Factor correction Package pin definition:
● Pin 1 - gate
● Pin 2 & backside - collector
● Pin 3 - emitter G E Key Performance and Package Parameters Type VCE IC VCEsat, Tvj=25°C AIGB30N65H5 650V 30A 1.65V Tvjmax 175°C Marking AG30EH5 Package PG-TO263-3 Datasheet Please read the Important Notice and Warnings at the end of this document V 2.1 2019-10-18 AIGB30N65H5 High speed switching series fifth generation Table of Contents
DESCRIPTION
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