Infineon Technologies AIGBE40N65F5
High speed FAST IGBT
FEATURES AND BENEFITS
: C(TAB)● Best-in-Class efficiency in hard switching and resonant topologies
● 650V breakdown voltage
● Low gate charge QG
● Maximum junction temperature 175°C
● Dynamically stress tested
● Qualified according to AEC-Q101
● Pb-free lead plating; RoHS compliant
● Innovative high creepage D2PAK SMD package
● Complete product spectrum and PSpice Models: G(1) tab E(3-7)
APPLICATIONS
:● Off-board charger
● On-board charger
● DC/DC converter
● Power-factor correction 12 3 4 56 7 Package pin definition:
● Pin 1 : Gate
● Pin 2 : No Connect
● Pin 3-7 : Emitter Backside : Collector Key Performance and Package Parameters Type VCE IC VCEsat, Tvj=25°C AIGBE40N65F5 650V 40A 1.6V Tvjmax 175°C Marking AGE40EF5 Package PG-TO263-7-11 Datasheet Please read the Important Notice and Warnings at the end of this document V 2.1 2019-08-26 AIGBE40N65F5 High speed switching series fifth generation Table of Contents
DESCRIPTION
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