AIGW40N65F5 - IGBT

Description

Features

High speed F5 technology offering:.
Best-in-Class efficiency in hard switching and resonant topologies.
650V breakdown voltage.
Low gate charge QG.
Maximum junction temperature 175°C.
Dynamically stress tested.
Qualified according to AEC-Q101.
Green package (RoHS compliant).
Complete product spectrum and PSpice Models: http://www. infineon. com/igbt/ C G E.

Infineon

📥 Download Datasheet

Datasheet Details

Part number	AIGW40N65F5
Manufacturer	Infineon
File Size	1.74 MB
Description	IGBT
Datasheet	AIGW40N65F5 Datasheet
Additional preview pages of the AIGW40N65F5 datasheet.

📁 Similar Datasheet

Other Datasheets by Infineon

Full PDF Text Transcription

Click to expand full text

AIGW40N65F5 Highspeedswitchingseriesfifthgeneration HighspeedfastIGBTinTRENCHSTOPTM5technology FeaturesandBenefits: HighspeedF5technologyoffering: •Best-in-Classefficiencyinhardswitchingandresonant topologies •650Vbreakdownvoltage •LowgatechargeQG •Maximumjunctiontemperature175°C •Dynamicallystresstested •QualifiedaccordingtoAEC-Q101 •Greenpackage(RoHScompliant) •CompleteproductspectrumandPSpiceModels: http://www.infineon.

Published: Dec 16, 2020 |