Infineon Technologies AIGW50N65F5
IGBT
| Part No. | AIGW50N65F5 |
|---|---|
| Datasheet | AIGW50N65F5 Download |
| Manufacturer |  Infineon Technologies |
| Description | IGBT |
| Buy | Stock & Price |
FEATURES AND BENEFITS
: High speed F5 technology offering:● Best-in-Class efficiency in hard switching and resonant topologies
● 650V breakdown voltage
● Low gate charge QG
● Maximum junction temperature 175°C
● Dynamically stress tested
● Qualified according to AEC-Q101
● Green package (RoHS compliant)
● Complete product spectrum and PSpice Models: C G E
APPLICATIONS
:● Off-board charger
● On-board charger
● DC/DC converter
● Power-factor correction Package pin definition:
● Pin 1 - gate
● Pin 2 & backside - collector
● Pin 3 - emitter 1 2 3 Key Performance and Package Parameters Type VCE IC VCEsat, Tvj=25°C AIGW50N65F5 650V 50A 1.66V Tvjmax 175°C Marking AG50EF5 Package PG-TO247-3 Datasheet Please read the Important Notice and Warnings at the end of this document V 2.1 2017-06-27 AIGW50N65F5 High speed switching series fifth generation Table of Contents
DESCRIPTION
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
