AIGW50N65H5 - IGBT

Description

Features

High speed H5 technology offering:.
Best-in-Class efficiency in hard switching and resonant topologies.
Plug and play replacement of previous generation IGBTs.
650V breakdown voltage.
Low gate charge QG.
Maximum junction temperature 175°C.
Dynamically stress tested.
Qualified according to AEC-Q101.
Green package (RoHS compliant).
Complete product spectrum and PSpice Models: http://www. infineon. com.

Infineon

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Datasheet Details

Part number	AIGW50N65H5
Manufacturer	Infineon
File Size	1.74 MB
Description	IGBT
Datasheet	AIGW50N65H5 Datasheet
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AIGW50N65H5 Highspeedswitchingseriesfifthgeneration HighspeedfastIGBTinTRENCHSTOPTM5technology FeaturesandBenefits: HighspeedH5technologyoffering: •Best-in-Classefficiencyinhardswitchingandresonant topologies •PlugandplayreplacementofpreviousgenerationIGBTs •650Vbreakdownvoltage •LowgatechargeQG •Maximumjunctiontemperature175°C •Dynamicallystresstested •QualifiedaccordingtoAEC-Q101 •Greenpackage(RoHScompliant) •CompleteproductspectrumandPSpiceModels: http://www.infineon.

Published: Dec 16, 2020 |