AIMBG120R120M1 Datasheet | Infineon

CoolSiC™ 1200 V SiC Trench MOSFET Final datasheet CoolSiC™ 1200 V SiC Trench MOSFET : Silicon Carbide MOSFET PG-TO263-7-HV-ND5.8 Features - VDSS = 1200 V at Tvj = -55...175°C - IDDC = 22 A at TC = 25°C - RDS(on) = 117 mΩ at VGS = 20 V, Tvj = 25°C - New performance-optimized chip technology (Gen1p) with improved RDSon- A - Best in class switching energy for lower switching losses and reduced cooling efforts - Lowest device capacitances for higher switching speeds and higher power density - A bination of low Crss/Ciss ratio and high VGS(th) to avoid parasitic turn-on and enable 2021-10-27 unipolar restricted gate driving - Reduced total gate charge QG for lower driving...