AIMBG120R160M1 - 1200 V SiC Trench MOSFET

Product Overview

Infineon

Datasheet Details

Part number	AIMBG120R160M1
Manufacturer	Infineon
File Size	1.58 MB
Description	1200 V SiC Trench MOSFET
Datasheet	AIMBG120R160M1 Datasheet
Additional preview pages of the AIMBG120R160M1 datasheet.

Product details

Description

Pin definition: Pin 1 - Gate Pin 2 - Kelvin sense contact Pin 3…7 - Source Tab - Drain Note: The source and sense pins are not exchangeable, their exchange might lead to malfunction Type AIMBG120R160M1 Package PG-TO263-7-U01 Marking AS160MM1 Datasheet www.infineon.com Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.20 2024-11-12 AIMBG120R160M1 CoolSiC™ 1200 V SiC Trench MOSFET Table of contents Tabl

Features

VDSS = 1200 V at Tvj = -55175°C.
IDDC = 17 A at TC = 25°C.
RDS(on) = 160 mΩ at VGS = 20 V, Tvj = 25°C.
New performance-optimized chip technology (Gen1p) with improved RDSon.
A.
Best in class switching energy for lower switching losses and reduced cooling efforts.
Lowest device capacitances for higher switching speeds and higher power density.
A combination of low Crss/Ciss ratio and high VGS(th) to avoid parasitic turn-on and en.

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Published: Sep 26, 2024 |