Datasheet4U Logo Datasheet4U.com

AIMCQ120R020M1T - Automotive MOSFET

Description

Pin definition: Pin 1 - Gate Pin 2 - Drive Source Pin 311 - Power Source Pin 1222, TAB - Drain Note: the drive source and power source pins are not exchangeable, their exchange might lead to malfunction Type AIMCQ120R020M1T Package PG-HDSOP-22-3 Marking 12A

Features

  • VDSS = 1200 V at Tvj = -55175°C.
  • IDDC = 116 A at TC = 25°C.
  • RDS(on) = 19 mΩ at VGS = 20 V, Tvj = 25°C.
  • New performance-optimized chip technology (Gen1p) with improved RDSon.
  • A.
  • Best in class switching energy for lower switching losses and reduced cooling efforts.
  • Lowest device capacitances for higher switching speeds and higher power density.
  • A combination of low Crss/Ciss ratio and high VGS(th) to avoid parasitic turn-on and en.

📥 Download Datasheet

Datasheet preview – AIMCQ120R020M1T

Datasheet Details

Part number AIMCQ120R020M1T
Manufacturer Infineon
File Size 1.52 MB
Description Automotive MOSFET
Datasheet download datasheet AIMCQ120R020M1T Datasheet
Additional preview pages of the AIMCQ120R020M1T datasheet.

📁 Similar Datasheet

  • AIM5C05B060N1 - Intelligent Power Module (Alpha & Omega Semiconductors)
  • AIM5C05B060N1S - Intelligent Power Module (Alpha & Omega Semiconductors)
  • AIM5D05B060N1 - Intelligent Power Module (Alpha & Omega Semiconductors)
  • AIM5D10L060Q4 - Dual-In-Line Package Intelligent Power Module (Alpha & Omega Semiconductors)
  • AIM5D10L060Q4S - Dual-In-Line Package Intelligent Power Module (Alpha & Omega Semiconductors)
  • AIM702H50B - Intelligent Power Module (Alpha & Omega Semiconductors)
  • AIM702S60C1 - Intelligent Power Module (Alpha & Omega Semiconductors)
  • AIM702S60V1 - Intelligent Power Module (Alpha & Omega Semiconductors)
  • AIM703S60C1 - Intelligent Power Module (Alpha & Omega Semiconductors)
  • AIM704H50B - Intelligent Power Module (Alpha & Omega Semiconductors)
Other Datasheets by Infineon

Full PDF Text Transcription

Click to expand full text
AIMCQ120R020M1T CoolSiC™ Automotive MOSFET 1200 V Final datasheet CoolSiC™ Automotive MOSFET 1200 V in HDSOP-22-3 package Features • VDSS = 1200 V at Tvj = -55...175°C • IDDC = 116 A at TC = 25°C • RDS(on) = 19 mΩ at VGS = 20 V, Tvj = 25°C • New performance-optimized chip technology (Gen1p) with improved RDSon* A • Best in class switching energy for lower switching losses and reduced cooling efforts • Lowest device capacitances for higher switching speeds and higher power density • A combination of low Crss/Ciss ratio and high VGS(th) to avoid parasitic turn-on and enable unipolar gate driving • Reduced total gate charge QG for lower driving power and losses • Increased recommended turn-on voltage (VGS(on) = 20 V) for lower RDS(on) • .
Published: |