AIMCQ120R160M1T
Overview
- VDSS = 1200 V at Tvj = -55...175°C
- IDDC = 18.6 A at TC = 25°C
- RDS(on) = 160 mΩ at VGS = 20 V, Tvj = 25°C
- New performance-optimized chip technology (Gen1p) with improved RDSon* A
- Best in class switching energy for lower switching losses and reduced cooling efforts
- Lowest device capacitances for higher switching speeds and higher power density
- A combination of low Crss/Ciss ratio and high VGS(th) to avoid parasitic turn-on and enable unipolar gate driving
- Increased recommended turn-on voltage (VGS(on) = 20 V) for lower RDS(on)
- Reduced total gate charge QG for lower driving power and losses
- .XT die attach technology for best in class thermal performance
