AIMCQ120R160M1T Infineon Datasheet

AIMCQ120R160M1T Key Features

• VDSS = 1200 V at Tvj = -55...175°C
• IDDC = 18.6 A at TC = 25°C
• RDS(on) = 160 mΩ at VGS = 20 V, Tvj = 25°C
• New performance-optimized chip technology (Gen1p) with improved RDSon- A
• Best in class switching energy for lower switching losses and reduced cooling efforts
• Lowest device capacitances for higher switching speeds and higher power density
• A bination of low Crss/Ciss ratio and high VGS(th) to avoid parasitic turn-on and enable unipolar
• Increased remended turn-on voltage (VGS(on) = 20 V) for lower RDS(on)
• Reduced total gate charge QG for lower driving power and losses
• XT die attach technology for best in class thermal performance