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AIMDQ75R025M2H - SiC MOSFET

Description

1 Maximum ratings 3 T

Features

  • Highly robust 750V technology, 100% avalanche tested.
  • Best‑in‑class RDS(on) x Qfr.
  • Excellent RDS(on) x Qoss and RDS(on) x QG.
  • Unique combination of low Crss/Ciss and high VGS(th).
  • Infineon proprietary die attach technology.
  • Cutting edge TSC package with material group I.
  • Driver source pin available Benefits.
  • Enhanced robustness and reliability for bus voltages beyond 500 V.
  • Superior efficiency in hard switching.

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Datasheet preview – AIMDQ75R025M2H

Datasheet Details

Part number AIMDQ75R025M2H
Manufacturer Infineon
File Size 1.41 MB
Description SiC MOSFET
Datasheet download datasheet AIMDQ75R025M2H Datasheet
Additional preview pages of the AIMDQ75R025M2H datasheet.

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Full PDF Text Transcription

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Public AIMDQ75R025M2H Final datasheet SiC MOSFET CoolSiC™ Automotive Power Device 750 V G2 Built on Infineon’s robust 2nd generation Silicon Carbide trench technology, the 750 V CoolSiC™ MOSFET delivers unparalleled performance, superior reliability, and great ease of use. It enables cost effective, highly efficient, and simplified designs to fulfill the ever‑growing system and market needs.
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