AIMW120R045M1 Datasheet PDF (Silicon Carbide MOSFET)

AIMW120R045M1 - Silicon Carbide MOSFET

Features

Revolutionary semiconductor material - Silicon Carbide.
Very low switching losses.
Threshold-free on state characteristic.
IGBT-compatible driving voltage (15V for turn-on).
0V turn-off gate voltage.
Benchmark gate threshold voltage, VGS(th)=4.5V.
Fully controllable dv/dt.
Commutation robust body diode, ready for synchronous rectification.
Temperature independent turn-off switching losses Benefits.
Efficiency improvement.
Enabling higher fr.

Datasheet Details

Part number	AIMW120R045M1
Manufacturer	Infineon
File Size	1.33 MB
Description	Silicon Carbide MOSFET
Datasheet	AIMW120R045M1 Datasheet
Additional preview pages of the AIMW120R045M1 datasheet.

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Full PDF Text Transcription

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AIMW120R045M1 AIMW120R045M1 CoolSiC™ 1200V SiC Trench MOSFET Silicon Carbide MOSFET Features  Revolutionary semiconductor material - Silicon Carbide  Very low switching losses  Threshold-free on state characteristic  IGBT-compatible driving voltage (15V for turn-on)  0V turn-off gate voltage  Benchmark gate threshold voltage, VGS(th)=4.

Published: Jul 2, 2020 |