AIMW120R045M1
Features
- Revolutionary semiconductor material
- Silicon Carbide
- Very low switching losses
- Threshold-free on state characteristic
- IGBT-patible driving voltage (15V for turn-on)
- 0V turn-off gate voltage
- Benchmark gate threshold voltage, VGS(th)=4.5V
- Fully controllable dv/dt
- mutation robust body diode, ready for synchronous rectification
- Temperature independent turn-off switching losses
Benefits
- Efficiency improvement
- Enabling higher frequency
- Increased power density
- Cooling effort reduction
- Reduction of system plexity and cost
Potential Applications
- On-board Charger/PFC
- Booster/DC-DC Converter
- Auxilliary Inverter
Product Validation
Qualified for Automotive Applications. Product Validation according to AEC-Q100/101”
Table 1
Key Performance and Package Parameters
Type
RDS(on),typ
VDS (TC=25°C, (Tvj=25°C, ID=20A, Tvjmax
Rth(j-c,max))
VGS=15V)
AIMW120R045M1 1200V 52A
45mΩ 175°C
Marking A120M1045
SP Number SP002472666
Package PG-TO247-3-41
Da...
