Infineon Technologies AIMW120R045M1
Silicon Carbide MOSFET
| Part No. | AIMW120R045M1 |
|---|---|
| Datasheet | AIMW120R045M1 Download |
| Manufacturer |  Infineon Technologies |
| Description | Silicon Carbide MOSFET |
| Buy | Stock & Price |
FEATURES
● Revolutionary semiconductor material - Silicon Carbide● Very low switching losses
● Threshold-free on state characteristic
● IGBT-compatible driving voltage (15V for turn-on)
● 0V turn-off gate voltage
● Benchmark gate threshold voltage, VGS(th)=4.5V
● Fully controllable dv/dt
● Commutation robust body diode, ready for synchronous rectification
● Temperature independent turn-off switching losses Benefits
● Efficiency improvement
● Enabling higher frequency
● Increased power density
● Cooling effort reduction
● Reduction of system complexity and cost Potential
APPLICATIONS
● On-board Charger/PFC● Booster/DC-DC Converter
● Auxilliary Inverter Product Validation Qualified for Automotive
APPLICATIONS
. Product Validation according to AEC-Q100/101” Table 1 Key Performance and Package Parameters Type ID RDS(on),typ VDS (TC=25°C, (Tvj=25°C, ID=20A, Tvjmax Rth(j-c,max)) VGS=15V) AIMW120R045M1 1200V 52A 45mΩ 175°C Marking A120M1045 SP Number SP002472666 Package PG-TO247-3-41 Datashe...
