Infineon Technologies AIMW120R060M1H
MOSFET
| Part No. | AIMW120R060M1H |
|---|---|
| Datasheet | AIMW120R060M1H Download |
| Manufacturer |  Infineon Technologies |
| Description | MOSFET |
| Buy | Stock & Price |
FEATURES
● Revolutionary semiconductor material - Silicon Carbide Gate pin 1● Very low switching losses
● Threshold-free on state characteristic
● IGBT-compatible driving voltage (18V for turn-on)
● 0V turn-off gate voltage
● Benchmark gate threshold voltage, VGS(th)=4.5V
● Fully controllable dv/dt
● Commutation robust body diode, ready for synchronous rectification
● Temperature independent turn-off switching losses Benefits
● Efficiency improvement
● Enabling higher frequency
● Increased power density
● Cooling effort reduction
● Reduction of system complexity and cost 12 3 Potential
APPLICATIONS
● On-board Charger/PFC● Booster/DC-DC Converter Product validation Qualified for Automotive
APPLICATIONS
. Product Validation according to AEC-Q100/101 Drain pin 2 Sou rce pin 3 Table 1 Key Performance and Package Parameters Type VDS ID RDS(on),typ (Tvj = 25°C, ID = 13A, Tvjmax (TC=25°C, Rth(j-c,max)) VGS = 18V) AIMW120R060M1H 1200V 36A 60mΩ 175°C Marking Package A120M1060 PG-TO247-3-41 Dat...
