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AIMW120R060M1H - MOSFET

Key Features

  • Revolutionary semiconductor material - Silicon Carbide Gate pin 1.
  • Very low switching losses.
  • Threshold-free on state characteristic.
  • IGBT-compatible driving voltage (18V for turn-on).
  • 0V turn-off gate voltage.
  • Benchmark gate threshold voltage, VGS(th)=4.5V.
  • Fully controllable dv/dt.
  • Commutation robust body diode, ready for synchronous rectification.
  • Temperature independent turn-off switching losses Bene.

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Full PDF Text Transcription (Reference)

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AIMW120R060M1H AIMW120R060M1H CoolSiC™ Automotive 1200V SiC Trench MOSFET 1200V G1 Silicon Carbide MOSFET Features • Revolutionary semiconductor material - Silicon Carbide Gate pin 1 • Very low switching losses • Threshold-free on state characteristic • IGBT-compatible driving voltage (18V for turn-on) • 0V turn-off gate voltage • Benchmark gate threshold voltage, VGS(th)=4.