AIMW120R060M1H Description
AIMW120R060M1H AIMW120R060M1H CoolSiC™ Automotive 1200V SiC Trench MOSFET 1200V G1 Silicon Carbide MOSFET.
AIMW120R060M1H Key Features
- Revolutionary semiconductor material
- Silicon Carbide
- Very low switching losses
- Threshold-free on state characteristic
- IGBT-patible driving voltage (18V for turn-on)
- 0V turn-off gate voltage
- Benchmark gate threshold voltage, VGS(th)=4.5V
- Fully controllable dv/dt
- mutation robust body diode, ready for synchronous rectification
- Temperature independent turn-off switching losses