AIMW120R060M1H Datasheet PDF (MOSFET) | Download Infineon AIMW120R060M1H

AIMW120R060M1H - MOSFET

Features

Revolutionary semiconductor material - Silicon Carbide Gate pin 1.
Very low switching losses.
Threshold-free on state characteristic.
IGBT-compatible driving voltage (18V for turn-on).
0V turn-off gate voltage.
Benchmark gate threshold voltage, VGS(th)=4.5V.
Fully controllable dv/dt.
Commutation robust body diode, ready for synchronous rectification.
Temperature independent turn-off switching losses Bene.

Datasheet Details

Part number	AIMW120R060M1H
Manufacturer	Infineon
File Size	0.96 MB
Description	MOSFET
Datasheet	AIMW120R060M1H Datasheet
Additional preview pages of the AIMW120R060M1H datasheet.

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Full PDF Text Transcription

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AIMW120R060M1H AIMW120R060M1H CoolSiC™ Automotive 1200V SiC Trench MOSFET 1200V G1 Silicon Carbide MOSFET Features • Revolutionary semiconductor material - Silicon Carbide Gate pin 1 • Very low switching losses • Threshold-free on state characteristic • IGBT-compatible driving voltage (18V for turn-on) • 0V turn-off gate voltage • Benchmark gate threshold voltage, VGS(th)=4.

Published: Sep 1, 2023 |