Infineon Technologies AUIRF1010Z
The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.| Part No. | AUIRF1010Z |
|---|---|
| Datasheet | AUIRF1010Z Download |
| Manufacturer |  Infineon Technologies |
| Description | Power MOSFET |
| Buy | Stock & Price |
FEATURES
● Advanced Process Technology● Ultra Low On-Resistance
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax
● Lead-Free, RoHS Compliant
● Automotive Qualified *
DESCRIPTION
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. AUIRF1010Z AUIRF1010ZS AUIRF1010ZL VDSS HEXFET® Power MOSFET 55V RDS(on) max. 7.5m ID (Silicon Limited) 94A ID (Package Limited) 75A DD GDS TO-220AB AUIRF1010Z G Gate S G D2Pak AUIRF1010ZS D Drain S GD TO-262 AUIRF1010ZL S Source Base part number AUIRF1010Z AUIRF1010ZL AUIRF1010ZS Package Type TO...
