Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.
Key Features
Advanced Planar Technology.
Low On-Resistance.
175°C Operating Temperature.
Fast Switching.
Fully Avalanche Rated.
Repetitive Avalanche Allowed up to Tjmax.
Lead-Free, RoHS Compliant.
Automotive Qualified.
AUIRF3305
HEXFET® Power MOSFET
V(BR)DSS RDS(on) max. ID
55V 8.0m 140A.
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AUTOMOTIVE GRADE Features Advanced Planar Technology Low On-Resistance 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche A...
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ture Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * AUIRF3305 HEXFET® Power MOSFET V(BR)DSS RDS(on) max. ID 55V 8.0m 140A Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive