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AUIRF3305 - Power MOSFET

Description

Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.

Features

  • Advanced Planar Technology.
  • Low On-Resistance.
  • 175°C Operating Temperature.
  • Fast Switching.
  • Fully Avalanche Rated.
  • Repetitive Avalanche Allowed up to Tjmax.
  • Lead-Free, RoHS Compliant.
  • Automotive Qualified.
  • AUIRF3305 HEXFET® Power MOSFET V(BR)DSS RDS(on) max. ID 55V 8.0m 140A.

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Datasheet preview – AUIRF3305

Datasheet Details

Part number AUIRF3305
Manufacturer Infineon
File Size 1.33 MB
Description Power MOSFET
Datasheet download datasheet AUIRF3305 Datasheet
Additional preview pages of the AUIRF3305 datasheet.

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Full PDF Text Transcription

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AUTOMOTIVE GRADE Features  Advanced Planar Technology  Low On-Resistance  175°C Operating Temperature  Fast Switching  Fully Avalanche Rated  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotive Qualified * AUIRF3305 HEXFET® Power MOSFET V(BR)DSS RDS(on) max. ID 55V 8.0m 140A Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.
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