Datasheet4U Logo Datasheet4U.com

AUIRF7103Q - Dual N-Channel MOSFET

Datasheet Summary

Description

Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.

Features

  • Advanced Planar Technology.
  • Dual N Channel MOSFET.
  • Low On-Resistance.
  • Logic Level Gate Drive.
  • Dynamic dv/dt Rating.
  • 175°C Operating Temperature.
  • Fast Switching.
  • Repetitive Avalanche Allowed up to Tjmax.
  • Lead-Free, RoHS Compliant.
  • Automotive Qualified.
  •   S1 G1 S2 G2 1 2 3 4 8 D1 7 D1 6 D2 5 D2 Top View VDSS RDS(on) max. ID.

📥 Download Datasheet

Datasheet preview – AUIRF7103Q

Datasheet Details

Part number AUIRF7103Q
Manufacturer Infineon
File Size 420.70 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet AUIRF7103Q Datasheet
Additional preview pages of the AUIRF7103Q datasheet.

📁 Similar Datasheet

  • AUIRF7103Q - Power MOSFET (International Rectifier)
  • AUIRF7207Q - Power MOSFET (International Rectifier)
  • AUIRF7303Q - Power MOSFET (International Rectifier)
  • AUIRF7304Q - Power MOSFET (International Rectifier)
  • AUIRF7309Q - Power MOSFET (International Rectifier)
  • AUIRF7313Q - Power MOSFET (International Rectifier)
  • AUIRF7316Q - Power MOSFET (International Rectifier)
  • AUIRF7319Q - Power MOSFET (International Rectifier)
  • AUIRF7341Q - Power MOSFET (International Rectifier)
  • AUIRF7342Q - Power MOSFET (International Rectifier)
Other Datasheets by Infineon

Full PDF Text Transcription

Click to expand full text
  AUTOMOTIVE GRADE AUIRF7103Q Features  Advanced Planar Technology  Dual N Channel MOSFET  Low On-Resistance  Logic Level Gate Drive  Dynamic dv/dt Rating  175°C Operating Temperature  Fast Switching  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotive Qualified *   S1 G1 S2 G2 1 2 3 4 8 D1 7 D1 6 D2 5 D2 Top View VDSS RDS(on) max. ID Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.
Published: |