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AUIRF7484Q - Power MOSFET

Description

Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.

Features

  • Advanced Planar Technology.
  • Low On-Resistance.
  • 150°C Operating Temperature.
  • Fast Switching.
  • Fully Avalanche Rated.
  • Repetitive Avalanche Allowed up to Tjmax.
  • Lead-Free, RoHS Compliant.
  • Automotive Qualified.
  •  S S S G 18 27 36 45 Top View AA D D D D HEXFET® Power MOSFET VDSS RDS(on) max. ID 40V 10m 14A.

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Datasheet preview – AUIRF7484Q

Datasheet Details

Part number AUIRF7484Q
Manufacturer Infineon
File Size 400.24 KB
Description Power MOSFET
Datasheet download datasheet AUIRF7484Q Datasheet
Additional preview pages of the AUIRF7484Q datasheet.

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Full PDF Text Transcription

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  AUTOMOTIVE GRADE AUIRF7484Q Features  Advanced Planar Technology  Low On-Resistance  150°C Operating Temperature  Fast Switching  Fully Avalanche Rated  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotive Qualified *  S S S G 18 27 36 45 Top View AA D D D D HEXFET® Power MOSFET VDSS RDS(on) max. ID 40V 10m 14A Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.
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