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AUIRFN7107 Datasheet Power MOSFET

Manufacturer: Infineon

Overview:   AUTOMOTIVE GRADE AUIRFN7107.

General Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon are.

Additional

Key Features

  •  Advanced Process Technology.
  •  Ultra Low On-Resistance.
  •  175°C Operating Temperature.
  •  Fast Switching.
  •  Repetitive Avalanche Allowed up to Tjmax.
  •  Lead-Free, RoHS Compliant.
  •  Automotive Qualified.
  • HEXFET® POWER MOSFET VDSS RDS(on) max (@VGS = 10V) QG (typical) 75V 8.5m 51nC.