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AUIRFN7107 - Power MOSFET

Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon are.

Features

  •  Advanced Process Technology.
  •  Ultra Low On-Resistance.
  •  175°C Operating Temperature.
  •  Fast Switching.
  •  Repetitive Avalanche Allowed up to Tjmax.
  •  Lead-Free, RoHS Compliant.
  •  Automotive Qualified.
  • HEXFET® POWER MOSFET VDSS RDS(on) max (@VGS = 10V) QG (typical) 75V 8.5m 51nC.

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Datasheet preview – AUIRFN7107

Datasheet Details

Part number AUIRFN7107
Manufacturer Infineon
File Size 250.84 KB
Description Power MOSFET
Datasheet download datasheet AUIRFN7107 Datasheet
Additional preview pages of the AUIRFN7107 datasheet.

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Full PDF Text Transcription

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  AUTOMOTIVE GRADE AUIRFN7107 Features  Advanced Process Technology  Ultra Low On-Resistance  175°C Operating Temperature  Fast Switching  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotive Qualified * HEXFET® POWER MOSFET VDSS RDS(on) max (@VGS = 10V) QG (typical) 75V 8.5m 51nC Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon are. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.
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