AUIRFN7107
AUIRFN7107 is Power MOSFET manufactured by Infineon.
AUTOMOTIVE GRADE
Features
- Advanced Process Technology
- Ultra Low On-Resistance
- 175°C Operating Temperature
- Fast Switching
- Repetitive Avalanche Allowed up to Tjmax
- Lead-Free, RoHS pliant
- Automotive Qualified
- HEXFET® POWER MOSFET
VDSS
RDS(on) max (@VGS = 10V)
QG (typical)
75V 8.5m 51nC
Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon are. Additional Features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These Features bine to make this...