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AUIRFN8405 - Power MOSFET

Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Features

  •  Advanced Process Technology.
  •  Ultra Low On-Resistance.
  •  175°C Operating Temperature.
  •  Fast Switching.
  •  Repetitive Avalanche Allowed up to Tjmax.
  •  Lead-Free, RoHS Compliant.
  •  Automotive Qualified.

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Datasheet preview – AUIRFN8405

Datasheet Details

Part number AUIRFN8405
Manufacturer Infineon
File Size 565.03 KB
Description Power MOSFET
Datasheet download datasheet AUIRFN8405 Datasheet
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Full PDF Text Transcription

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  AUTOMOTIVE GRADE AUIRFN8405 Features  Advanced Process Technology  Ultra Low On-Resistance  175°C Operating Temperature  Fast Switching  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotive Qualified * Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this product an extremely efficient and reliable device for use in Automotive and wide variety of other applications.
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