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AUIRFR4292 - Power MOSFET

General Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Key Features

  • Advanced Process Technology.
  • Low On-Resistance.
  • 175°C Operating Temperature.
  • Fast Switching.
  • Repetitive Avalanche Allowed up to Tjmax.
  • Lead-Free, RoHS Compliant.
  • Automotive Qualified.
  •   VDSS RDS(on) ID D AUIRFR4292 AUIRFU4292 typ. max. 250V 275m 345m 9.3A D.

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Full PDF Text Transcription for AUIRFR4292 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for AUIRFR4292. For precise diagrams, and layout, please refer to the original PDF.

AUTOMOTIVE GRADE Features  Advanced Process Technology  Low On-Resistance  175°C Operating Temperature  Fast Switching  Repetitive Avalanche Allowed up to Tjmax  L...

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rature  Fast Switching  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotive Qualified * VDSS RDS(on) ID D AUIRFR4292 AUIRFU4292 typ. max. 250V 275m 345m 9.3A D Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automo