Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
Key Features
Advanced Process Technology.
Low On-Resistance.
175°C Operating Temperature.
Fast Switching.
Repetitive Avalanche Allowed up to Tjmax.
Lead-Free, RoHS Compliant.
Automotive Qualified.
VDSS RDS(on) ID
D
AUIRFR4292 AUIRFU4292
typ. max. 250V 275m 345m
9.3A
D.
Full PDF Text Transcription for AUIRFR4292 (Reference)
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AUTOMOTIVE GRADE Features Advanced Process Technology Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax L...
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rature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * VDSS RDS(on) ID D AUIRFR4292 AUIRFU4292 typ. max. 250V 275m 345m 9.3A D Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automo