AUIRFR4292
Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.
Key Features
- Advanced Process Technology
- Low On-Resistance
- 175°C Operating Temperature
- Fast Switching
- Repetitive Avalanche Allowed up to Tjmax
- Lead-Free, RoHS compliant
- Automotive Qualified * VDSS RDS(on) ID D AUIRFR4292 AUIRFU4292 typ. max. 250V 275m 345m 9.3A D
