Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
Features
- Advanced Process Technology.
- Ultra Low On-Resistance.
- 175°C Operating Temperature.
- Fast Switching.
- Repetitive Avalanche Allowed up to Tjmax.
- Lead-Free, RoHS Compliant.
- Automotive Qualified.
-
AUIRFS3004-7P
HEXFET® Power MOSFET
VDSS RDS(on)
typ. max. ID (Silicon Limited) ID (Package Limited)
40V 0.90m 1.25m 400A
240A
.
AUIRFS3004-7P Datasheet
