Infineon Technologies AUIRFS4127
The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.| Part No. | AUIRFS4127 |
|---|---|
| Datasheet | AUIRFS4127 Download |
| Manufacturer |  Infineon Technologies |
| Description | Power MOSFET |
| Buy | Stock & Price |
FEATURES
● Advanced Process Technology● Ultra Low On-Resistance
●175°C Operating Temperature
●Fast Switching
● Repetitive Avalanche Allowed up to Tjmax
● Lead-Free, RoHS Compliant
● Automotive Qualified *
DESCRIPTION
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. D G S D AUIRFS4127 AUIRFSL4127 HEXFET® Power MOSFET VDSS RDS(on) typ. max ID 200V 18.6m 22m 72A D S G D2Pak AUIRFS4127 G Gate D Drain S D G TO-262 AUIRFSL4127 S Source Base part number AUIRFSL4127 AUIRFS4127 Package Type TO-262 D2-Pak Standard Pack Form Quantity Tube 50 Tube 50 Tape and Reel...
