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AUIRFSL6535 - Power MOSFET

Download the AUIRFSL6535 datasheet PDF (AUIRFS6535 included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for power mosfet.

Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • Advanced Process Technology.
  • Low On-Resistance.
  • 175°C Operating Temperature.
  • Fast Switching.
  • Repetitive Avalanche Allowed up to Tjmax.
  • Lead-Free, RoHS Compliant.
  • Automotive Qualified.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AUIRFS6535-Infineon.pdf) that lists specifications for multiple related part numbers.
Other Datasheets by Infineon

Full PDF Text Transcription

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AUTOMOTIVE GRADE Features  Advanced Process Technology  Low On-Resistance  175°C Operating Temperature  Fast Switching  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotive Qualified * Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. AUIRFS6535 AUIRFSL6535 HEXFET® Power MOSFET VDSS RDS(on) typ. max.
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