AUIRFU540Z
Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
Key Features
- of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating
- VDSS RDS(on) ID D AUIRFR540Z AUIRFU540Z HEXFET® Power MOSFET typ
