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AUIRGB4062D1 - IGBT

Datasheet Summary

Features

  • Low VCE (on) Trench IGBT Technology.
  • Low Switching Losses.
  • 5µs short circuit SOA.
  • Square RBSOA.
  • 100% of the parts tested for ILM.
  • Positive VCE (on) Temperature Coefficient.
  • Ultra Fast Soft Recovery Co-pak Diode.
  • Tighter Distribution of Parameters.
  • Lead-Free, RoHS Compliant C G E n-channel C VCES = 600V IC(Nominal) = 24A tSC 5µs, TJ(max) = 175°C VCE(on) typ. = 1.57V C C.
  • Automotive Qualified.
  • Benefits.
  • High Efficiency in a Wide.

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Datasheet Details

Part number AUIRGB4062D1
Manufacturer Infineon
File Size 641.52 KB
Description IGBT
Datasheet download datasheet AUIRGB4062D1 Datasheet
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Full PDF Text Transcription

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AUTOMOTIVE GRADE AUIRGB4062D1 AUIRGS4062D1 AUIRGSL4062D1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features  Low VCE (on) Trench IGBT Technology  Low Switching Losses  5µs short circuit SOA  Square RBSOA  100% of the parts tested for ILM  Positive VCE (on) Temperature Coefficient.  Ultra Fast Soft Recovery Co-pak Diode  Tighter Distribution of Parameters  Lead-Free, RoHS Compliant C G E n-channel C VCES = 600V IC(Nominal) = 24A tSC 5µs, TJ(max) = 175°C VCE(on) typ. = 1.
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