Datasheet4U Logo Datasheet4U.com

AUIRGP35B60PD-E - IGBT

Key Features

  • NPT Technology, Positive Temperature Coefficient.
  • Lower VCE(SAT).
  • Lower Parasitic Capacitances.
  • Minimal Tail Current.

📥 Download Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
AUTOMOTIVE GRADE AUIRGP35B60PD-E WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE Features  NPT Technology, Positive Temperature Coefficient  Lower VCE(SAT)  Lower Parasitic Capacitances  Minimal Tail Current  HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode  Tighter Distribution of Parameters  Higher Reliability  Lead-Free, RoHS Compliant  Automotive Qualified * C G E n-channel VCES = 600V VCE(on) typ. = 1.85V @ VGE = 15V IC = 22A Equivalent MOSFET Parameters RCE(on) typ.