AUIRGP50B60PD1-E - IGBT

Infineon

Download the AUIRGP50B60PD1-E datasheet PDF. This datasheet also covers the AUIRGP50B60PD1 variant, as both devices belong to the same igbt family and are provided as variant models within a single manufacturer datasheet.

Key Features

Low VCE(ON) NPT Technology, Positive Temperature Coefficient.
Lower Parasitic Capacitances.
Minimal Tail Current.

📥 Download Datasheet

AUIRGP50B60PD1-E igbt by Infineon - Datasheet Preview — Note: The manufacturer provides a single datasheet file (AUIRGP50B60PD1-Infineon.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	AUIRGP50B60PD1-E
Manufacturer	Infineon
File Size	565.47 KB
Description	IGBT
Datasheet	AUIRGP50B60PD1-E Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
AUIRGP50B60PD1	WARP2 SERIES IGBT	International Rectifier
AUIRGP50B60PD1E	WARP2 SERIES IGBT	International Rectifier
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AUIRGP35B60PD-E	IGBT	International Rectifier
AUIRGP4063D	INSULATED GATE BIPOLAR TRANSISTOR	International Rectifier

Other Datasheets by Infineon

Part Number	Description
AUIRGP50B60PD1	IGBT
AUIRGP35B60PD	IGBT
AUIRGP35B60PD-E	IGBT
AUIRGP4062D	INSULATED GATE BIPOLAR TRANSISTOR
AUIRGP4062D-E	INSULATED GATE BIPOLAR TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

AUTOMOTIVE GRADE AUIRGP50B60PD1 AUIRGP50B60PD1-E WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE Applications  Automotive HEV and EV  PFC and ZVS SMPS Circuits Features  Low VCE(ON) NPT Technology, Positive Temperature Coefficient  Lower Parasitic Capacitances  Minimal Tail Current  HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode  Tighter Distribution of Parameters  Lead-Free, RoHS Compliant  Automotive Qualified * Benefits  Parallel Operation for Higher Current Applications  Lower Conduction Losses and Switching Losses  Higher Switching Frequency up to 150kHz C G E n-channel C VCES = 600V VCE(on) typ. = 2.00V @ VGE = 15V IC = 33A Equivalent MOSFET Parameters RCE(on) typ.