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AUIRGSL30B60K - INSULATED GATE BIPOLAR TRANSISTOR

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Infineon

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AUIRGSL30B60K INSULATED GATE BIPOLAR TRANSISTOR by Infineon - Datasheet Preview — Datasheet preview – AUIRGSL30B60K

Datasheet Details

Part number	AUIRGSL30B60K
Manufacturer	Infineon
File Size	394.85 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	AUIRGSL30B60K Datasheet
Note	This datasheet PDF includes multiple part numbers: AUIRGSL30B60K, AUIRGS30B60K. Please refer to the document for exact specifications by model.
Additional preview pages of the AUIRGSL30B60K datasheet.

Product details

Features

Low VCE (on) Non Punch Through IGBT Technology.
10µs Short Circuit Capability.
Square RBSOA.
Positive VCE (on) Temperature Coefficient.
Maximum Junction Temperature rated at 175°C.
Lead-Free, RoHS Compliant.
Automotive Qualified.
Benefits.
Benchmark Efficiency for Motor Control.
Rugged Transient Performance for Increased Reliability.
Low EMI.
Excellent Current Sharing in Parallel Operation C G E n-channel C VCES = 600V IC = 50.

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Published: Dec 16, 2020 |