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AUIRL1404L - Power MOSFET

Download the AUIRL1404L datasheet PDF. This datasheet also covers the AUIRL1404S variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.

Key Features

  • Advanced Planar Technology.
  • Logic Level Gate Drive.
  • Low On-Resistance.
  • Dynamic dV/dT Rating.
  • 175°C Operating Temperature.
  • Fast Switching.
  • Fully Avalanche Rated.
  • Repetitive Avalanche Allowed up to Tjmax.
  • Lead-Free, RoHS Compliant.
  • Automotive Qualified.
  •  .

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AUIRL1404S-Infineon.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
AUIRL1404L Power MOSFET International Rectifier
AUIRL1404S Power MOSFET International Rectifier
AUIRL1404Z Power MOSFETs International Rectifier
AUIRL1404ZL Power MOSFETs International Rectifier
AUIRL1404ZS Power MOSFETs International Rectifier

Other Datasheets by Infineon

Part Number Description
AUIRL1404S Power MOSFET
AUIRL1404Z Power MOSFET
AUIRL1404ZL Power MOSFET
AUIRL1404ZS Power MOSFET
AUIRL3705Z Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
  AUTOMOTIVE GRADE Features  Advanced Planar Technology  Logic Level Gate Drive  Low On-Resistance  Dynamic dV/dT Rating  175°C Operating Temperature  Fast Switching  Fully Avalanche Rated  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotive Qualified *   Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.