Infineon Technologies AUIRLL024Z
Power MOSFET
FEATURES
● Advanced Process Technology● Ultra Low On-Resistance
● Logic Level Gate Drive
● 150°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax
● Lead-Free, RoHS Compliant
● Automotive Qualified *
DESCRIPTION
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. AUIRLL024Z HEXFET® Power MOSFET VDSS 55V RDS(on) typ. 48m max. 60m ID 5.0A D S D G SOT-223 AUIRLL024Z G Gate D Drain S Source Base part number AUIRLL024Z Package Type SOT-223 Standard Pack Form Quantity